Rf Mosfet Amplifier Power Module,45w, 806-870mhz &amp,original

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Detailed Rf Mosfet Amplifier Power Module,45w, 806-870mhz &amp,original Description:


rf mosfet amplifier power module,45W, 806-870MHz &,original RA45H8087M
Specification: Type: Field-Effect Transistor ; Package Type: Throught Hole ;
The RA45H8087M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range. The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

Brand name: Mitsubishi
Module number:RA45H8087M
Frequency range: 806-870MHz
Vdd: 12.5V
RF POWER MODULE

Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

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  • Model: RA45H8087M
  • Packing: Export Standard
  • Terms of Payment: T/T,T/C
  • Delivery Time: 30 Days
  • Products ID: 112261
  • Product Category: Transistors
  • Post date: Aug 15, 2011
Our company is specialized exporter, manufacturer and supplier of Rf Mosfet Amplifier Power Module,45w, 806-870mhz &amp,original in China.


           

Manufacturer/supplier's information

Company: Shanghai Finer Semiconductor Co., Ltd.
Address: RM 24A,No.435,Gonghe Xin Road,Shanghai
Region: Shanghai, Shanghai, China
Contact Person: Ms. Sunny Su
Telephone: 86-21-56327415

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