Detailed Rf Mosfet Amplifier Power Module Description:
RF MOSFET Amplifier Power Module RA05H8696M
Specification: Type: Field-Effect Transistor ; Package Type: Throught Hole ;
The RA05H8696M is a 5-watt RF MOSFET Amplifier Module for 14-volt RFID reader/ writer that operate in the 866- to 956-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.8V (typical) and 4V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for ASK/ FM modulation, and may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
• Enhancement-Mode MOSFET Transistors
(@ VDD=14V, VGG=0V)
• Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
• IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW
• Broadband Frequency Range: 866-956MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
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- Model: RA05H8696M
- Packing: Export Standard
- Terms of Payment: T/T,T/C
- Delivery Time: 30 Days
- Products ID: 112244
- Product Category: Transistors
- Post date: Aug 15, 2011
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Mitsubishi Rf Mosfet Amplifier Power Module