Ic Grade Mono Silicon Polished Wafers

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Detailed Ic Grade Mono Silicon Polished Wafers Description:


IC grade mono silicon polished wafers
Specification: Size: 3''-8'' ; Type: N/P ;
IC grade mono silicon polished wafers
Mono Silicon Polished Wafer
Size
3"/4"/5"/6"/8"....
Growth method
CZ
Diameter
76.2±0.3mm /100±0.4mm/ 125±0.5mm/ 150±0.5mm/200±0.5mm
Orientation
<111> <100>
Type
N,P
Purity
11N(99.999999999%)
Oxygen Content
≤20-36ppma
Carborn Content
≤1ppma
Resistivity Range
0.001-150Ω·cm
RRV: P type<10%, N type<25%
Thickness
According to ur Requirement
TTV<10um, Bow<40um,Warp<40um
Min. Order Quantity
100pcs
Price
According to your specification especially Resistivity and thickness

  • Packing: Export Standard
  • Terms of Payment: T/T,T/C
  • Delivery Time: 30 Days
  • Products ID: 111377
  • Product Category: Semiconductors
  • Post date: Aug 16, 2011
Our company is specialized exporter, manufacturer and supplier of Ic Grade Mono Silicon Polished Wafers in China.


           

Manufacturer/supplier's information

Company: Shanghai Panmeng Electronic Materials Co., Ltd.
Address: Room2007,Buliding 1,600# Tianshan Road
Region: Changning District, Shanghai, China
Contact Person: Ms. Maggie Wu
Telephone: 86-21-61457121

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