Detailed Semiconductor Graphite Description:
Semiconductor Graphite
Specification: Density(g/cm3): 1.77-1.85 ; Shore hardness( Shore-D): 55-90 ; Flexural strength (Mpa): 45-89 ; Coefficient of thermal expansion 10-6/℃: 2.9-4. ; Thermal conductivity: 90-100 ; Ash content PPM: 200 ; Electric Resistivity(μΩ m): 12-15 ; Average grain size: 15-3 ; Average Pore Size: 15-10 ;
For Semiconductor Graphite
A great many of ultra purity graphites and SiC coated high purity graphite susceptors are required during the late stage of the semiconductor production process.
This graphite has the features of high in the temperature resistant and the strength as well as good in the thermal conduction.
High purity isotropic graphite technology can greatly meet this special requirement and is widely used in production regions such as the epitaxy, the ion implantation and MOCVD.
- Model: maxin
- Packing: Export Standard
- Terms of Payment: T/T,T/C
- Delivery Time: 30 Days
- Products ID: 111383
- Product Category: Semiconductors
- Post date: Aug 14, 2011
Our company is specialized exporter, manufacturer and supplier of Semiconductor Graphite in China.
