Detailed Mono Silicon Ingot Description:
General Characteristics: Diameter 152. 0 + / -1mm ; Crystal Growth Method CZ ; Crystallinity Mono ; Crystal Orientation <100> + / -3 degree ; Conductivity Type P ; Purity-min 6N or 7N ; Dopant Boron ; Resistivity 0. 5 ~ 3, 3~6ohm-cm ; Lifetime-min 10 microsecond ; Oxygen Concerntration < 1. 0 x E18 at / cm3 ; Carbon Concerntration < 1. 0 x E16 at / cm3 ; Appearance None of fracture, cracks, Glue Residual & Contamination ; Origin Japan.
- Products ID: 23328
- Product Category: Ingot
- Post date: Aug 15, 2008
Our company is specialized exporter, manufacturer and supplier of Mono Silicon Ingot in china.
Only paid memberships can view detailed information about this manufacturer/supplier.
